CRD-5FF0912P, SiC MOSFET High-Frequency Evaluation Board for 7L D2PAK

CRD-5FF0912P, Evaluation Board is to demonstrate the high-switching performance of 3 rd Generation Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) in a 7L D2PAK package. The new surface-mount device (SMD), specifically designed for high voltage MOSFETs, has a small footprint with a wide creepage distance of 7mm between drain and source. The new package also includes a separate driver source connection, which reduces gate ringing and provides clean gate signals. The board can easily be configured into common power conversion topologies such as synchronous boost, synchronous buck, Inverter, and other topologies