CRD-20DD09P-2, 20kW Full Bridge Resonant LLC Converter Board Enabling Smaller, Cooler and Lower Cost off-board EV Chargers

CRD-20DD09P-2, evaluation hardware to demonstrate the system performance of 3rd Generation Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) in a full bridge LLC circuit that may be typically used for fast DC chargers for electrical vehicles. The new 1000V rated device in a 4L-TO247 package, specifically designed for SiC MOSFETs, has a Kelvin source connection to improve switching losses and reduce ringing in the gate circuit. It also features a notch between the drain and source pins to increase the creep distance to accommodate higher voltage SiC MOSFETs