CGD15HB62P1, Dual Channel Gate Driver Reference Design for 1200V, 62mm SiC MOSFET Power Module

CGD15HB62P1, Reference Design is a two-channel gate driver for 1200V SiC MOSFET power modules. Each of the two gate drive channels is protected by a desaturation circuit. In the event of a short circuit, the voltage across the MOSFET (VDS) rises until it hits a threshold which causes the desaturation circuit to drive both gate drive channels to their off state