STGW40H65DFB

STGW40H65DFB

STMicroelectronics

Description:

Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-247 Tube

Country of Origin:

China

Introduction date:

Mar 12, 2013

Updated:24-DEC-2024

CAD Models

Overview

Familiarize yourself with the fundamental general information, properties, and characteristics of the component, along with its compliance with industry standards and regulations.

LifeCyclePremium
EU RoHSYes with Exemption
RoHS Version2011/65/EU, 2015/863
EAR99
Automotive No
Supplier Cage CodeSCR76
Schedule B8541290080
PPAP No
AEC Qualified No
Category Path
Semiconductor > Diodes, Transistors and Thyristors > IGBT Transistors > IGBT Chip

Datasheet

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Datasheet Preview

(Latest Version)

Manufacturing

The manufacturing information specifies the technical requirements and specifications for producing and assembling the component. This information is crucial for manufacturers to maintain the quality and reliability of the components, and ensure they are compatible with other devices and components.

Reflow Temp. Source
Wave Temp. Source
Shelf Life Period
Number of Wave Cycles

Parametric

The parametric information displays vital features and performance metrics of the component, which helps engineers and supply chain managers to compare and choose the most appropriate electronic component for their applications and needs.

Product Line
Maximum Transition Frequency
Number of Elements per Chip
Maximum Junction Temperature
Minimum Storage Temperature
Supplier Temperature Grade
Maximum Storage Temperature
Maximum Gate Emitter Leakage Current
Tradename
Process Technology
Minimum Transition Frequency
Typical Transition Frequency
Technology
Channel Type
Configuration
Maximum Collector-Emitter Voltage
Maximum Gate Emitter Voltage
Maximum Continuous Collector Current
Maximum Power Dissipation
Typical Collector Emitter Saturation Voltage
Minimum Operating Temperature
Maximum Operating Temperature

CAD Models

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