NT5AD256M16E4-HRI
Nanya Technology描述: | DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin TFBGA |
推出日期: | Feb 10, 2022 |
更新:11-NOV-2024 | |
線上版本:https://www.datasheets.com/zh-tw/part-details/nt5ad256m16e4-hri-nanya-technology-1845245597
概述
熟悉元件的基本一般資訊、特性和特點,以及其符合產業標準和法規的情況。
參數
參數資訊顯示了元件的重要特性和性能指標,這有助於工程師和供應鏈經理比較和選擇最適合他們應用和需求的電子元件。
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生產線
Maximum Refresh Cycle Time
Process Technology
Supplier Temperature Grade
Number of I/O Lines
Operating Supply Voltage
Number of Bits per Word
Minimum Storage Temperature
Maximum Storage Temperature
Refresh Cycles
Density
類型
Interface Type
Organization
Maximum Clock Rate
Maximum Access Time
Number of Internal Banks
Number of Words per Bank
Typical Operating Supply Voltage
Minimum Operating Supply Voltage
Maximum Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Data Bus Width
Address Bus Width
Maximum Operating Current
Density in Bits