DMN5010VAK
Diodes Incorporated描述: | Trans MOSFET N-CH 50V 0.28A 6-Pin SOT-563 |
產地: | China |
推出日期: | Oct 17, 2006 |
更新:09-DEC-2024 | |
線上版本:https://www.datasheets.com/zh-tw/part-details/dmn5010vak-diodes-incorporated-35125029
概述
熟悉元件的基本一般資訊、特性和特點，以及其符合產業標準和法規的情況。
生命週期高級
歐盟RoHS Yes
RoHS版本2011/65/EU, 2015/863
EAR99
汽車 No
供應商CAGE代碼6M0U4
8541210095
排程B8541210080
PPAP No
AEC合格 No
類別路徑
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > MOSFETs
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > MOSFETs
數據手冊
透過下載元件的規格表來全面了解電子元件。這份 PDF 文件包含了所有必要的詳細資訊，如產品概述、特點、規格、評級、圖表、應用等等。
數據表預覽
(Latest 版本)製造
製造資訊指定了生產和組裝元件的技術要求和規格。這些資訊對於製造商來說非常重要，以維護元件的品質和可靠性，並確保它們與其他設備和元件兼容。
參數
參數資訊顯示了元件的重要特性和性能指標，這有助於工程師和供應鏈經理比較和選擇最適合他們應用和需求的電子元件。
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生產線
Breakdown Voltage Type
Minimum DC Current Gain
Typical Switch Charge
Typical Gate Resistance
Typical Reverse Recovery Charge
Typical Forward Transconductance
Tradename
Minimum Gate Threshold Voltage
Typical Reverse Transfer Capacitance @ Vds
Maximum Offset Voltage
Maximum Positive Gate Source Voltage
Minimum Gate Resistance
Maximum Gate Resistance
Typical Gate Threshold Voltage
Typical Diode Forward Voltage
Maximum Diode Forward Voltage
Typical Reverse Recovery Time
Maximum Pulsed Drain Current @ TC=25°C
Maximum Forward Transconductance
Minimum Forward Transconductance
Minimum IDSS
ID For GFS
VDS For GFS
Maximum Input Capacitance @ Vds
Typical IDSS
Maximum Storage Temperature
Operating Junction Temperature
Maximum Gate Source Leakage Current
Minimum Storage Temperature
Typical Gate to Drain Charge
Typical Gate to Source Charge
Maximum Junction Ambient Thermal Resistance
Maximum Junction Case Thermal Resistance
Typical Fall Time
Typical Rise Time
Typical Turn-Off Delay Time
Supplier Temperature Grade
Typical Turn-On Delay Time
Configuration
Maximum Absolute Continuous Drain Current
類別
Channel Mode
Channel Type
Number of Elements per Chip
Process Technology
Maximum Drain Source Voltage
Maximum Gate Source Voltage
Maximum Continuous Drain Current
Material
Maximum Gate Threshold Voltage
Maximum Drain Source Resistance
Maximum IDSS
Typical Gate Charge @ Vgs
Typical Gate Charge @ 10V
Typical Input Capacitance @ Vds
Maximum Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Typical Output Capacitance