2N3866JV
Semicoa Semiconductors描述: | RF Epitaxial Bipolar Transistor |
產地: | United States of America |
推出日期: | Jun 22, 1999 |
更新:29-OCT-2024 | |
線上版本:https://www.datasheets.com/zh-tw/part-details/2n3866jv-semicoa-semiconductors-46475879
概述
熟悉元件的基本一般資訊、特性和特點，以及其符合產業標準和法規的情況。
生命週期高級
歐盟RoHS No
RoHS版本2011/65/EU, 2015/863
類別路徑
Semiconductor > Diodes, Transistors and Thyristors > Bipolar Transistors > RF BJT
Semiconductor > Diodes, Transistors and Thyristors > Bipolar Transistors > RF BJT
數據手冊
透過下載元件的規格表來全面了解電子元件。這份 PDF 文件包含了所有必要的詳細資訊，如產品概述、特點、規格、評級、圖表、應用等等。
數據表預覽
(Latest 版本)參數
參數資訊顯示了元件的重要特性和性能指標，這有助於工程師和供應鏈經理比較和選擇最適合他們應用和需求的電子元件。
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生產線
Maximum Turn-Off Time
Maximum Rise Time
Maximum Emitter Cut-Off Current
Maximum DC Collector Current Range
Collector Current for VCE Saturation
Typical Transition Frequency
Minimum Transition Frequency
Process Technology
Maximum Collector-Emitter Voltage Range
Maximum Collector Cut-Off Current
Typical Collector Efficiency
Tradename
Supplier Temperature Grade
Minimum Storage Temperature
Maximum Storage Temperature
類型
Configuration
Number of Elements per Chip
Maximum Collector-Emitter Voltage
Maximum Collector Base Voltage
Maximum Emitter Base Voltage
Maximum DC Collector Current
Maximum Power Dissipation
Maximum Junction Ambient Thermal Resistance
Maximum Junction Case Thermal Resistance
Minimum DC Current Gain
Minimum DC Current Gain Range
Maximum Collector-Emitter Saturation Voltage
Maximum Base Emitter Saturation Voltage
Maximum Transition Frequency
Maximum Turn-On Time
Maximum Noise Figure
Typical Input Capacitance
Typical Output Capacitance
Output Power
Maximum Power 1dB Compression
Operational Bias Conditions
Typical Power Gain
Maximum 3rd Order Intercept Point
Minimum Operating Temperature
Maximum Operating Temperature
Material