NT5AD512M8E3-JRT
Nanya Technology描述: | DRAM Chip DDR4 SDRAM 4Gbit 512Mx8 1.2V |
推出日期: | Feb 10, 2022 |
更新:29-OCT-2024 | |
在线版本:https://www.datasheets.com/zh-cn/part-details/nt5ad512m8e3-jrt-nanya-technology-1845245495
概述
熟悉该组件的基本一般信息、属性和特征,以及其与行业标准和法规的符合情况。
生命周期高级
类别路径
Semiconductor > Memory > Memory Chips > DRAM Chip
Semiconductor > Memory > Memory Chips > DRAM Chip
参数
参数信息显示了该组件的重要特性和性能指标,这有助于工程师和供应链经理比较和选择最适合其应用和需求的电子组件。
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生产线
Maximum Refresh Cycle Time
Process Technology
Supplier Temperature Grade
Number of I/O Lines
Operating Supply Voltage
Number of Bits per Word
Minimum Storage Temperature
Maximum Storage Temperature
Refresh Cycles
Density
类型
Interface Type
Organization
Maximum Clock Rate
Maximum Access Time
Number of Internal Banks
Number of Words per Bank
Typical Operating Supply Voltage
Minimum Operating Supply Voltage
Maximum Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Data Bus Width
Address Bus Width
Maximum Operating Current
Density in Bits