MT29F2G08ABBEAH4-ITX:E TR
Micron Technology描述: | SLC NAND Flash Parallel 1.8V 2G-bit 256M x 8 63-Pin VFBGA T/R |
产地: | Malaysia |
推出日期: | Sep 10, 2010 |
更新:13-OCT-2024 | |
在线版本:https://www.datasheets.com/zh-cn/part-details/mt29f2g08abbeah4-itx-e-tr-micron-technology-65606779
概述
熟悉该组件的基本一般信息、属性和特征，以及其与行业标准和法规的符合情况。
制造
制造信息指定了生产和组装该组件的技术要求和规格。这些信息对于制造商来说至关重要，以保持组件的质量和可靠性，并确保其与其他设备和组件兼容。
参数
参数信息显示了该组件的重要特性和性能指标，这有助于工程师和供应链经理比较和选择最适合其应用和需求的电子组件。
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生产线
Programmability
MMC Version
Simultaneous Read/Write Support
Erase Suspend/Resume Modes Support
ECC Support
OE Access Time
Page Read Current
Program Current
Page Size
Supplier Temperature Grade
Minimum Storage Temperature
Minimum Endurance
Maximum Storage Temperature
I/O Mode
Maximum Cycle Time
Process Technology
Tradename
Sector Size
Density in Bits
Command Compatible
Bank Size
Number of Banks
Support of Page Mode
Maximum Page Access Time
Support of Common Flash Interface
Density
Cell Type
Interface Type
Timing Type
Number of Words
Number of Bits per Word
Maximum Operating Frequency
Maximum Access Time
Maximum Erase Time
Maximum Programming Time
Typical Operating Supply Voltage
Minimum Operating Supply Voltage
Maximum Operating Supply Voltage
Architecture
Programming Voltage
Boot Block
Location of Boot Block
Maximum Operating Current
Block Organization
Address Width
Minimum Operating Temperature
Maximum Operating Temperature
参考设计
通过我们的参考设计解锁灵感和指导，探索展示电子组件能力的实用实现。通过详细文档和原理图加速开发过程，创建高效的解决方案。
