H26M41208HPR
SK hynix Inc描述: | 8 GB NAND Flash |
产地: | Korea (Republic of) |
推出日期: | Nov 28, 2016 |
更新:+90 天 | |
在线版本:https://www.datasheets.com/zh-cn/part-details/h26m41208hpr-sk-hynix-inc-98770834
概述
熟悉该组件的基本一般信息、属性和特征，以及其与行业标准和法规的符合情况。
生命周期高级
欧盟RoHS Yes
RoHS版本2011/65/EU, 2015/863
3A991.b.1.a
汽车 No
供应商CAGE代码9162F
8542320071
日程B8542320070
PPAP No
AEC认证 No
类别路径
Semiconductor > Memory > Memory Chips > Flash
Semiconductor > Memory > Memory Chips > Flash
技术资料
通过下载该电子元件的数据手册来全面了解其。这个PDF文档包含了所有必要的细节，如产品概述、特性、规格、评级、图表、应用等等。
数据表预览
(Latest 版本)参数
参数信息显示了该组件的重要特性和性能指标，这有助于工程师和供应链经理比较和选择最适合其应用和需求的电子组件。
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生产线
Programmability
MMC Version
Simultaneous Read/Write Support
Erase Suspend/Resume Modes Support
ECC Support
OE Access Time
Page Read Current
Program Current
Page Size
Supplier Temperature Grade
Minimum Storage Temperature
Minimum Endurance
Maximum Storage Temperature
I/O Mode
Maximum Cycle Time
Process Technology
Tradename
Sector Size
Density in Bits
Command Compatible
Bank Size
Number of Banks
Support of Page Mode
Maximum Page Access Time
Support of Common Flash Interface
Density
Cell Type
Interface Type
Timing Type
Number of Words
Number of Bits per Word
Maximum Operating Frequency
Maximum Access Time
Maximum Erase Time
Maximum Programming Time
Typical Operating Supply Voltage
Minimum Operating Supply Voltage
Maximum Operating Supply Voltage
Architecture
Programming Voltage
Boot Block
Location of Boot Block
Maximum Operating Current
Block Organization
Address Width
Minimum Operating Temperature
Maximum Operating Temperature