描述: | SILICON DARLINGTON POWER TRANSISTORS |
产地: | China |
推出日期: | Nov 29, 2013 |
更新:+90 天 | |
在线版本:https://www.datasheets.com/zh-cn/part-details/bd652-comset-semiconductors-61043701
概述
熟悉该组件的基本一般信息、属性和特征，以及其与行业标准和法规的符合情况。
生命周期高级
欧盟RoHS Yes
RoHS版本2011/65/EU
汽车 Unknown
供应商CAGE代码B1564
AEC认证 Unknown
类别路径
Semiconductor > Diodes, Transistors and Thyristors > Bipolar Transistors > Darlington BJT
Semiconductor > Diodes, Transistors and Thyristors > Bipolar Transistors > Darlington BJT
技术资料
通过下载该电子元件的数据手册来全面了解其。这个PDF文档包含了所有必要的细节，如产品概述、特性、规格、评级、图表、应用等等。
数据表预览
(Latest 版本)参数
参数信息显示了该组件的重要特性和性能指标，这有助于工程师和供应链经理比较和选择最适合其应用和需求的电子组件。
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生产线
Minimum Storage Temperature
Output Clamp Diode
Maximum Clamp Diode Leakage Current
Maximum Clamp Diode Forward Voltage
Maximum Collector-Emitter Cut-Off Current
Maximum Input Current
Maximum Storage Temperature
Maximum Base Current
Operating Junction Temperature
Supplier Temperature Grade
Typical Current Gain Bandwidth
Maximum Collector Cut-Off Current
Maximum DC Current Gain
Typical Transition Frequency
Process Technology
Minimum DC Current Gain Range
Collector Current for VCE Saturation
Minimum Transition Frequency
Maximum Transition Frequency
Maximum Pulsed Collector Current
Maximum Diode Forward Voltage
类型
Configuration
Number of Elements per Chip
Maximum Collector-Emitter Voltage
Maximum Collector Base Voltage
Maximum Emitter Base Voltage
Maximum Continuous DC Collector Current
Maximum Power Dissipation
Maximum Base Emitter Saturation Voltage
Maximum Collector-Emitter Saturation Voltage
Minimum DC Current Gain
Minimum Operating Temperature
Maximum Operating Temperature