3P4J-Z-AZ
Renesas Electronics描述: | Power Discrete Mold Thyristor |
推出日期: | Sep 12, 2006 |
更新:15-NOV-2024 | |
在线版本:https://www.datasheets.com/zh-cn/part-details/3p4j-z-az-renesas-electronics-1846067186
概述
熟悉该组件的基本一般信息、属性和特征，以及其与行业标准和法规的符合情况。
生命周期高级
欧盟RoHSYes with Exemption
RoHS版本2011/65/EU, 2015/863
类别路径
Semiconductor > Diodes, Transistors and Thyristors > Thyristors > Silicon Controlled Rectifiers - SCRs
Semiconductor > Diodes, Transistors and Thyristors > Thyristors > Silicon Controlled Rectifiers - SCRs
技术资料
通过下载该电子元件的数据手册来全面了解其。这个PDF文档包含了所有必要的细节，如产品概述、特性、规格、评级、图表、应用等等。
数据表预览
(Latest 版本)参数
参数信息显示了该组件的重要特性和性能指标，这有助于工程师和供应链经理比较和选择最适合其应用和需求的电子组件。
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生产线
Minimum Storage Temperature
Maximum Storage Temperature
Temperature Flag
Peak Gate Power Dissipation
Average Gate Power Dissipation
Circuit Fusing Consideration
Maximum Latching Current
Supplier Temperature Grade
Phase Control
Process Technology
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Blocking Voltage
Rated Average On-State Current
RMS On-State Current
Surge Current Rating
Maximum Holding Current
Peak On-State Voltage
Repetitive Peak Off-State Current
Maximum Gate Trigger Current
Maximum Gate Trigger Voltage
Maximum Rate of Rise of Off-State Voltage
Maximum Rate of Rise of On-State Current
Maximum Gate Peak Inverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Operating Junction Temperature
