2SK30ATM-R
Toshiba描述: | Trans JFET N-CH 0.75mA Si 3-Pin TO-92 |
推出日期: | Jun 5, 1997 |
更新:+90 天 | |
查看更多 JFETs 属于 Toshiba | |
在线版本:https://www.datasheets.com/zh-cn/part-details/2sk30atm-r-toshiba-34937777
概述
熟悉该组件的基本一般信息、属性和特征，以及其与行业标准和法规的符合情况。
生命周期高级
欧盟RoHS No
RoHS版本2011/65/EU, 2015/863
类别路径
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > JFETs
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > JFETs
技术资料
通过下载该电子元件的数据手册来全面了解其。这个PDF文档包含了所有必要的细节，如产品概述、特性、规格、评级、图表、应用等等。
数据表预览
(Latest 版本)制造
制造信息指定了生产和组装该组件的技术要求和规格。这些信息对于制造商来说至关重要，以保持组件的质量和可靠性，并确保其与其他设备和组件兼容。
参数
参数信息显示了该组件的重要特性和性能指标，这有助于工程师和供应链经理比较和选择最适合其应用和需求的电子组件。
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生产线
Maximum Duty Cycle
Breakdown Voltage Type
Maximum Gate Source Leakage Current
Minimum Gate Threshold Voltage
Number of Elements per Chip
Typical Gate Threshold Voltage
Maximum Gate Threshold Voltage
Maximum Pulsed Drain Current
Typical DC Current Gain
Maximum Junction Temperature
Typical Gate Charge
Supplier Temperature Grade
Minimum Drain Saturation Current
Process Technology
Maximum Transconductance
Minimum Transconductance
ID For GFS
VDS For GFS
Maximum Input Capacitance
Typical Drain Saturation Current
Maximum Storage Temperature
Typical Input Capacitance
Typical Reverse Transfer Capacitance
Maximum Drain Source Resistance
Maximum Gate Source Cut-Off Voltage
Maximum Drain Saturation Current
Maximum Gate Current
Maximum Rise Time
Maximum Fall Time
Maximum Turn-On Delay Time
Maximum Turn-Off Delay Time
Minimum Frequency
Typical Transconductance
Maximum Frequency
Maximum Noise Figure
Minimum Storage Temperature
Maximum Junction Ambient Thermal Resistance
Maximum Junction Case Thermal Resistance
Technology
Channel Type
Configuration
Maximum Drain Source Voltage
Maximum Gate Source Voltage
Maximum Continuous Drain Current
Maximum Drain Gate Voltage
Material
Maximum Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature