2N5109JX
Semicoa Semiconductors描述: | Trans RF BJT NPN 20V 0.4A 3-Pin TO-39 |
产地: | United States of America |
推出日期: | Jun 22, 1999 |
更新:29-OCT-2024 | |
在线版本:https://www.datasheets.com/zh-cn/part-details/2n5109jx-semicoa-semiconductors-31170738
概述
熟悉该组件的基本一般信息、属性和特征，以及其与行业标准和法规的符合情况。
生命周期高级
欧盟RoHS No
RoHS版本2011/65/EU, 2015/863
类别路径
Semiconductor > Diodes, Transistors and Thyristors > Bipolar Transistors > RF BJT
Semiconductor > Diodes, Transistors and Thyristors > Bipolar Transistors > RF BJT
技术资料
通过下载该电子元件的数据手册来全面了解其。这个PDF文档包含了所有必要的细节，如产品概述、特性、规格、评级、图表、应用等等。
数据表预览
(Latest 版本)制造
制造信息指定了生产和组装该组件的技术要求和规格。这些信息对于制造商来说至关重要，以保持组件的质量和可靠性，并确保其与其他设备和组件兼容。
参数
参数信息显示了该组件的重要特性和性能指标，这有助于工程师和供应链经理比较和选择最适合其应用和需求的电子组件。
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生产线
Maximum Turn-Off Time
Maximum Rise Time
Maximum Emitter Cut-Off Current
Maximum DC Collector Current Range
Collector Current for VCE Saturation
Typical Transition Frequency
Minimum Transition Frequency
Process Technology
Maximum Collector-Emitter Voltage Range
Maximum Collector Cut-Off Current
Typical Collector Efficiency
Tradename
Supplier Temperature Grade
Minimum Storage Temperature
Maximum Storage Temperature
类型
Configuration
Number of Elements per Chip
Maximum Collector-Emitter Voltage
Maximum Collector Base Voltage
Maximum Emitter Base Voltage
Maximum DC Collector Current
Maximum Power Dissipation
Maximum Junction Ambient Thermal Resistance
Maximum Junction Case Thermal Resistance
Minimum DC Current Gain
Minimum DC Current Gain Range
Maximum Collector-Emitter Saturation Voltage
Maximum Base Emitter Saturation Voltage
Maximum Transition Frequency
Maximum Turn-On Time
Maximum Noise Figure
Typical Input Capacitance
Typical Output Capacitance
Output Power
Maximum Power 1dB Compression
Operational Bias Conditions
Typical Power Gain
Maximum 3rd Order Intercept Point
Minimum Operating Temperature
Maximum Operating Temperature
Material