TGF2934

TGF2934

Qorvo, Inc

Description:

DC - 25 GHz, 28 V, 14 W GaN RF Transistor

Introduction date:

Aug 24, 2016

Updated:+90 days

Overview

Familiarize yourself with the fundamental general information, properties, and characteristics of the component, along with its compliance with industry standards and regulations.

LifeCyclePremium
EU RoHS Yes
RoHS Version2011/65/EU, 2015/863
Category Path
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > RF FETs

Datasheet

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Datasheet Preview

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Parametric

The parametric information displays vital features and performance metrics of the component, which helps engineers and supply chain managers to compare and choose the most appropriate electronic component for their applications and needs.

Product Line
Supplier Temperature Grade
Maximum Forward Transconductance
Minimum Forward Transconductance
Minimum IDSS
ID For GFS
VDS For GFS
Maximum Input Capacitance @ Vds
Typical IDSS
Typical Gate Threshold Voltage
Breakdown Voltage Type
Minimum Gate Threshold Voltage
Type
Typical Power 1dB Compression
Material
Typical Forward Transconductance
Typical Output Capacitance @ Vds
Typical Reverse Transfer Capacitance @ Vds
Types of Output Stages
Typical Power Gain @ Vds
Maximum VSWR
Typical Gate Charge @ Vgs
Typical Fall Time
Typical Rise Time
Typical Turn-Off Delay Time
Process Technology
Maximum Gate Source Leakage Current
Maximum Gate Threshold Voltage
Maximum Duty Cycle
Typical Turn-On Delay Time
Minimum Storage Temperature
Maximum Storage Temperature
Typical Gate Charge @ 10V
Typical Drain Efficiency
Maximum Noise Figure
Maximum Gate Source Voltage
Maximum Drain Source Resistance
Channel Type
Configuration
Channel Mode
Number of Elements per Chip
Maximum Drain Source Voltage
Maximum Continuous Drain Current
Minimum Frequency
Maximum Frequency
Maximum Power Dissipation
Mode of Operation
Typical Power Gain
Output Power
Maximum IDSS
Typical Input Capacitance @ Vds
Minimum Operating Temperature
Maximum Operating Temperature

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