MUN2212T1G

MUN2212T1G

onsemi

Description:

Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R

Country of Origin:

China

Introduction date:

Jul 29, 1996

Updated:10-DEC-2024

CAD Models

Overview

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LifeCyclePremium
EU RoHS Yes
RoHS Version2011/65/EU, 2015/863
EAR99
Automotive No
Supplier Cage Code1MQ07
Schedule B8541210080
PPAP No
AEC Qualified No
Category Path
Semiconductor > Diodes, Transistors and Thyristors > Bipolar Transistors > Digital BJT - Pre-Biased

Datasheet

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Datasheet Preview

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Manufacturing

The manufacturing information specifies the technical requirements and specifications for producing and assembling the component. This information is crucial for manufacturers to maintain the quality and reliability of the components, and ensure they are compatible with other devices and components.

Parametric

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Product Line
Process Technology
Supplier Temperature Grade
Minimum DC Current Gain Range
Collector Current for VCE Saturation
Maximum Transition Frequency
Minimum Transition Frequency
Number of Elements per Chip
Minimum Storage Temperature
Maximum Storage Temperature
Maximum Base Current
Typical Base Emitter Resistor
Typical Current Gain Bandwidth
Operating Junction Temperature
Type
Configuration
Maximum Collector-Emitter Voltage
Maximum Continuous DC Collector Current
Maximum Power Dissipation
Typical Input Resistor
Typical Resistor Ratio
Maximum Base Emitter Saturation Voltage
Maximum Collector-Emitter Saturation Voltage
Minimum DC Current Gain
Minimum Operating Temperature
Maximum Operating Temperature

CAD Models

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