Datasheets
K4UBE3D4AB-MGCL

K4UBE3D4AB-MGCL

Samsung Electronics

Description:

DRAM Chip Mobile LPDDR4X SDRAM 256Gbit 8Gx32 1.1V/1.8V 200-Pin FBGA

Introduction date:

Apr 24, 2023

Updated:30-OCT-2024

See more DRAM Chip by Samsung Electronics
Part Specifications

Overview

Familiarize yourself with the fundamental general information, properties, and characteristics of the component, along with its compliance with industry standards and regulations.

LifeCyclePremium
EU RoHS Yes
RoHS Version2011/65/EU, 2015/863
Category Path
Semiconductor > Memory > Memory Chips > DRAM Chip

Datasheet

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Parametric

The parametric information displays vital features and performance metrics of the component, which helps engineers and supply chain managers to compare and choose the most appropriate electronic component for their applications and needs.

Product Line
Maximum Refresh Cycle Time
Process Technology
Supplier Temperature Grade
Number of I/O Lines
Operating Supply Voltage
Number of Bits per Word
Minimum Storage Temperature
Maximum Storage Temperature
Refresh Cycles
Density
Type
Interface Type
Organization
Maximum Clock Rate
Maximum Access Time
Number of Internal Banks
Number of Words per Bank
Typical Operating Supply Voltage
Minimum Operating Supply Voltage
Maximum Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Data Bus Width
Address Bus Width
Maximum Operating Current
Density in Bits

Crosses

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