2SK30ATM-R(T)

2SK30ATM-R(T)

Toshiba

Description:

Trans JFET N-CH 0.75mA Si 3-Pin TO-92 T/R

Introduction date:

Jun 5, 1997

Updated:+90 days

Overview

Familiarize yourself with the fundamental general information, properties, and characteristics of the component, along with its compliance with industry standards and regulations.

LifeCyclePremium
EU RoHS No
RoHS Version2011/65/EU, 2015/863
Category Path
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > JFETs

Datasheet

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Parametric

The parametric information displays vital features and performance metrics of the component, which helps engineers and supply chain managers to compare and choose the most appropriate electronic component for their applications and needs.

Product Line
Maximum Duty Cycle
Breakdown Voltage Type
Maximum Gate Source Leakage Current
Minimum Gate Threshold Voltage
Number of Elements per Chip
Typical Gate Threshold Voltage
Maximum Gate Threshold Voltage
Maximum Pulsed Drain Current
Typical DC Current Gain
Maximum Junction Temperature
Typical Gate Charge
Supplier Temperature Grade
Minimum Drain Saturation Current
Process Technology
Maximum Transconductance
Minimum Transconductance
ID For GFS
VDS For GFS
Maximum Input Capacitance
Typical Drain Saturation Current
Maximum Storage Temperature
Typical Input Capacitance
Typical Reverse Transfer Capacitance
Maximum Drain Source Resistance
Maximum Gate Source Cut-Off Voltage
Maximum Drain Saturation Current
Maximum Gate Current
Maximum Rise Time
Maximum Fall Time
Maximum Turn-On Delay Time
Maximum Turn-Off Delay Time
Minimum Frequency
Typical Transconductance
Maximum Frequency
Maximum Noise Figure
Minimum Storage Temperature
Maximum Junction Ambient Thermal Resistance
Maximum Junction Case Thermal Resistance
Technology
Channel Type
Configuration
Maximum Drain Source Voltage
Maximum Gate Source Voltage
Maximum Continuous Drain Current
Maximum Drain Gate Voltage
Material
Maximum Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature

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