Datasheets
2N5109UBJV

2N5109UBJV

Semicoa Semiconductors

Description:

Trans RF BJT NPN 20V 0.4A 1000mW 4-Pin CSOT-23

Country of Origin:

United States of America

Introduction date:

Aug 22, 2002

Updated:29-OCT-2024

See more RF BJT by Semicoa Semiconductors
Part SpecificationsPrice & Availability

Overview

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LifeCyclePremium
EU RoHS No
RoHS Version2011/65/EU, 2015/863
Category Path
Semiconductor > Diodes, Transistors and Thyristors > Bipolar Transistors > RF BJT

Datasheet

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Parametric

The parametric information displays vital features and performance metrics of the component, which helps engineers and supply chain managers to compare and choose the most appropriate electronic component for their applications and needs.

Product Line
Maximum Turn-Off Time
Maximum Rise Time
Maximum Emitter Cut-Off Current
Maximum DC Collector Current Range
Collector Current for VCE Saturation
Typical Transition Frequency
Minimum Transition Frequency
Process Technology
Maximum Collector-Emitter Voltage Range
Maximum Collector Cut-Off Current
Typical Collector Efficiency
Tradename
Supplier Temperature Grade
Minimum Storage Temperature
Maximum Storage Temperature
Type
Configuration
Number of Elements per Chip
Maximum Collector-Emitter Voltage
Maximum Collector Base Voltage
Maximum Emitter Base Voltage
Maximum DC Collector Current
Maximum Power Dissipation
Maximum Junction Ambient Thermal Resistance
Maximum Junction Case Thermal Resistance
Minimum DC Current Gain
Minimum DC Current Gain Range
Maximum Collector-Emitter Saturation Voltage
Maximum Base Emitter Saturation Voltage
Maximum Transition Frequency
Maximum Turn-On Time
Maximum Noise Figure
Typical Input Capacitance
Typical Output Capacitance
Output Power
Maximum Power 1dB Compression
Operational Bias Conditions
Typical Power Gain
Maximum 3rd Order Intercept Point
Minimum Operating Temperature
Maximum Operating Temperature
Material

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