2N3866

Description:

Designed for amplifier, frequency multiplier and oscillator applications

Country of Origin:

United States of America

Introduction date:

Jun 22, 1999

Updated:29-OCT-2024

Overview

Familiarize yourself with the fundamental general information, properties, and characteristics of the component, along with its compliance with industry standards and regulations.

LifeCyclePremium
EU RoHS No
RoHS Version2011/65/EU, 2015/863
Category Path
Semiconductor > Diodes, Transistors and Thyristors > Bipolar Transistors > RF BJT

Datasheet

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Manufacturing

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