2N7002E-7-F-79
Diodes IncorporatedDescripción: | MOSFETs Component |
Actualizado:+90 días | |
Ver más MOSFETs por Diodes Incorporated |
Versión en línea:https://www.datasheets.com/es/part-details/2n7002e-7-f-79-diodes-incorporated-1845095164
Resumen
Familiarícese con la información general fundamental, propiedades y características del componente, junto con su cumplimiento de los estándares y regulaciones de la industria.
Ciclo de VidaPremium
Ruta de la taxonomía
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > MOSFETs
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > MOSFETs
Paramétrico
La información paramétrica muestra características vitales y métricas de rendimiento del componente, lo que ayuda a los ingenieros y gerentes de la cadena de suministro a comparar y elegir el componente electrónico más adecuado para sus aplicaciones y necesidades.
Debes iniciar sesión para ver la información restringida.
línea de producto
Breakdown Voltage Type
Minimum DC Current Gain
Typical Switch Charge
Typical Gate Resistance
Typical Reverse Recovery Charge
Typical Forward Transconductance
Tradename
Minimum Gate Threshold Voltage
Typical Reverse Transfer Capacitance @ Vds
Maximum Offset Voltage
Maximum Positive Gate Source Voltage
Minimum Gate Resistance
Maximum Gate Resistance
Typical Gate Threshold Voltage
Typical Diode Forward Voltage
Maximum Diode Forward Voltage
Typical Reverse Recovery Time
Maximum Pulsed Drain Current @ TC=25°C
Maximum Forward Transconductance
Minimum Forward Transconductance
Minimum IDSS
ID For GFS
VDS For GFS
Maximum Input Capacitance @ Vds
Typical IDSS
Maximum Storage Temperature
Operating Junction Temperature
Maximum Gate Source Leakage Current
Minimum Storage Temperature
Typical Gate to Drain Charge
Typical Gate to Source Charge
Maximum Junction Ambient Thermal Resistance
Maximum Junction Case Thermal Resistance
Typical Fall Time
Typical Rise Time
Typical Turn-Off Delay Time
Supplier Temperature Grade
Typical Turn-On Delay Time
Configuration
Maximum Absolute Continuous Drain Current
Categoría
Channel Mode
Channel Type
Number of Elements per Chip
Process Technology
Maximum Drain Source Voltage
Maximum Gate Source Voltage
Maximum Continuous Drain Current
Material
Maximum Gate Threshold Voltage
Maximum Drain Source Resistance
Maximum IDSS
Typical Gate Charge @ Vgs
Typical Gate Charge @ 10V
Typical Input Capacitance @ Vds
Maximum Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Typical Output Capacitance