SD2918

30W RF DMOS Transistor, 125V, 30MHz, N-CH

N-channel RF transistor delivering 30W output power at 30MHz, featuring a 125V drain-to-source breakdown voltage and 50V test voltage. Operates with a continuous drain current of 6A and a gate-to-source voltage of 20V, offering 22dB gain. Housed in an M package for screw mounting, this component supports a maximum operating frequency of 200MHz and a maximum power dissipation of 175W. It is lead-free, RoHS compliant, and operates across a temperature range of -65°C to 200°C.

Frequency30MHz

PackageM

Voltage Rating125V

MountingScrew

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Technical Specifications

Stmicroelectronics SD2918 technical specifications.

General

Package/Case	M
Continuous Drain Current (ID)	6A
Drain to Source Breakdown Voltage	125V
Drain to Source Voltage (Vdss)	5V
DS Breakdown Voltage-Min	125V
Frequency	30MHz
Gain	22dB
Gate to Source Voltage (Vgs)	20V
Height	7.11mm
Input Capacitance	58pF
Lead Free	Lead Free
Length	24.89mm
Max Frequency	200MHz
Max Operating Temperature	200°C
Min Operating Temperature	-65°C
Max Output Power	30W
Max Power Dissipation	175W
Mount	Screw
Number of Elements	1
Output Power	30W
Package Quantity	25
Packaging	Tray
Polarity	N-CHANNEL
Power Dissipation	175W
Radiation Hardening	No
RoHS Compliant	Yes
Test Voltage	50V
Voltage Rating	125V
DC Rated Voltage	125V
Width	6.48mm