RD45HMF1
Mitsubishi Electric描述: | COMPLIANCE, SILICON MOSFET POWER TRANSISTOR 900MHZ, 45W |
產地: | Japan |
推出日期: | May 13, 2003 |
更新:+90 天 | |
線上版本:https://www.datasheets.com/zh-tw/part-details/rd45hmf1-mitsubishi-electric-15908407
概述
熟悉元件的基本一般資訊、特性和特點，以及其符合產業標準和法規的情況。
生命週期高級
歐盟RoHS Yes
RoHS版本2002/95/EC
類別路徑
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > RF FETs
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > RF FETs
數據手冊
透過下載元件的規格表來全面了解電子元件。這份 PDF 文件包含了所有必要的詳細資訊，如產品概述、特點、規格、評級、圖表、應用等等。
數據表預覽
(Latest 版本)參數
參數資訊顯示了元件的重要特性和性能指標，這有助於工程師和供應鏈經理比較和選擇最適合他們應用和需求的電子元件。
您必須登錄才能查看受限信息。
生產線
Supplier Temperature Grade
Maximum Forward Transconductance
Minimum Forward Transconductance
Minimum IDSS
ID For GFS
VDS For GFS
Maximum Input Capacitance @ Vds
Typical IDSS
Typical Gate Threshold Voltage
Breakdown Voltage Type
Minimum Gate Threshold Voltage
類型
Typical Power 1dB Compression
Material
Typical Forward Transconductance
Typical Output Capacitance @ Vds
Typical Reverse Transfer Capacitance @ Vds
Types of Output Stages
Typical Power Gain @ Vds
Maximum VSWR
Typical Gate Charge @ Vgs
Typical Fall Time
Typical Rise Time
Typical Turn-Off Delay Time
Process Technology
Maximum Gate Source Leakage Current
Maximum Gate Threshold Voltage
Maximum Duty Cycle
Typical Turn-On Delay Time
Minimum Storage Temperature
Maximum Storage Temperature
Typical Gate Charge @ 10V
Typical Drain Efficiency
Maximum Noise Figure
Maximum Gate Source Voltage
Maximum Drain Source Resistance
Channel Type
Configuration
Channel Mode
Number of Elements per Chip
Maximum Drain Source Voltage
Maximum Continuous Drain Current
Minimum Frequency
Maximum Frequency
Maximum Power Dissipation
Mode of Operation
Typical Power Gain
Output Power
Maximum IDSS
Typical Input Capacitance @ Vds
Minimum Operating Temperature
Maximum Operating Temperature
