N-Channel Power MOSFET, QFET® series, featuring a 500V drain-to-source breakdown voltage and a continuous drain current of 9A. This through-hole component offers a low Rds On of 800mΩ at a nominal Vgs of 4V. With a maximum power dissipation of 135W and operating temperatures from -55°C to 150°C, it is packaged in a TO-220-3 configuration. The component exhibits a fall time of 64ns and a turn-off delay time of 93ns, with an input capacitance of 1.03nF.
PackageTO-220-3
Current Rating9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP9N50C technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.03nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 135W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 135W |
| Rds On Max | 800mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 93ns |
| DC Rated Voltage | 500V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP9N50C Datasheet
Download the complete datasheet for Onsemi FQP9N50C to view detailed technical specifications.
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