N-Channel Power MOSFET, QFET™ series, featuring 500V drain-to-source breakdown voltage and 5A continuous drain current. This surface-mount component offers a low 1.4Ω drain-to-source resistance (Rds On Max) and a maximum power dissipation of 73W. Designed for efficient switching, it exhibits a typical turn-on delay of 12ns and fall time of 48ns. Packaged in a D2PAK for tape and reel distribution, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageD2PAK
Current Rating5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB5N50CTM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 500V |
| Element Configuration | Single |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 625pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 73W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 73W |
| Rds On Max | 1.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 500V |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB5N50CTM Datasheet
Download the complete datasheet for Onsemi FQB5N50CTM to view detailed technical specifications.
No datasheet is available for this part.