N-Channel Power MOSFET, UniFET™ series, featuring a 250V drain-to-source breakdown voltage and 4.4A continuous drain current. This surface-mount device in a DPAK package offers a maximum on-resistance of 1.1Ω and a power dissipation of 50W. Key switching characteristics include a 10ns turn-on delay and a 12ns fall time. Operating temperature range is -55°C to 150°C, with RoHS compliance.
Onsemi FDD6N25TM technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 1.1R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 7ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDD6N25TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
