United Silicon Carbide is a leading manufacturer of silicon carbide (SiC) power devices, offering high-performance MOSFETs and diodes for demanding applications in electric vehicles, renewable energy, and industrial power systems.
SiC MOSFET, 1200V, 65A, 0.045ohm, N-Ch, TO-247
35A, 1200V, 0.06ohm, N-CHANNEL, SiC, POWER, JFET, TO-247
6A, 650V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC
15A, 1200V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC
Power Field-Effect Transistor, 33.5A I(D), 1200V, 0.09ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247
20A, 650V, SILICON CARBIDE, RECTIFIER DIODE, TO-247
50A, 1200V, SILICON CARBIDE, RECTIFIER DIODE
5A, 1200V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC
10A, 650V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC
16A, 650V, SILICON CARBIDE, RECTIFIER DIODE, TO-247
15A, 1200V, SILICON CARBIDE, RECTIFIER DIODE, TO-247AD
10A, 1200V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC
10A, 1200V, SILICON CARBIDE, RECTIFIER DIODE, TO-247AD
20.5A, 1200V, 0.1ohm, N-CHANNEL, SiC, POWER, JFET, TO-247
Power Field-Effect Transistor
38A, 1200V, 0.045ohm, N-CHANNEL, SiC, POWER, JFET, TO-247
8A, 650V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC
21A, 1200V, 0.095ohm, N-CHANNEL, SiC, POWER, JFET, TO-247