High-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a robust 300V collector-emitter voltage rating and a continuous collector current capability of 32A. Optimized for efficient switching with low on-state voltage drop and fast switching speeds. Ideal for use in power supplies, motor control, and industrial automation systems.
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Technical Specifications
Littelfuse IXBH32N300 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXBH32N300 Datasheet
Download the complete datasheet for Littelfuse IXBH32N300 to view detailed technical specifications.
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