N-Channel Power MOSFET featuring 800V drain-to-source breakdown voltage and 12.6A continuous drain current. This QFET® series MOSFET offers a low 750mΩ drain-to-source resistance and 300W maximum power dissipation. Designed for through-hole mounting in a TO-3P/TO-3PN package, it operates from -55°C to 150°C. Key electrical characteristics include a 5V threshold voltage, 3.5nF input capacitance, and switching times of 60ns (turn-on delay) and 155ns (turn-off delay), with an 110ns fall time.
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Onsemi FQA13N80-F109 technical specifications.
General
| Continuous Drain Current (ID) | 12.6A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 800V |
| Element Configuration | Single |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 18.9mm |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 60ns |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA13N80-F109 Datasheet
Download the complete datasheet for Onsemi FQA13N80-F109 to view detailed technical specifications.
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