P-Channel PowerTrench® MOSFET, a single-element junction field-effect transistor designed for surface mounting. Features a continuous drain current of 6A and a drain-to-source breakdown voltage of -20V. Offers a low drain-to-source resistance of 31mΩ at a nominal Vgs of -500mV, with a maximum Rds On of 37mΩ. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2.1W. Packaged in tape and reel, this RoHS compliant component boasts fast switching speeds with a turn-on delay of 6.5ns and a fall time of 54ns.
MountingSurface Mount
PolarityP-CHANNEL
Power1.4W
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Technical Specifications
Onsemi FDME510PZT technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.5mm |
| Input Capacitance | 1.49nF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | -500mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 37mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Threshold Voltage | -500mV |
| Turn-Off Delay Time | 93ns |
| Turn-On Delay Time | 6.5ns |
| Weight | 0.03g |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDME510PZT Datasheet
Download the complete datasheet for Onsemi FDME510PZT to view detailed technical specifications.
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