P-channel MOSFET with integrated Schottky diode, offering a 20V drain-source breakdown voltage and 3A continuous drain current. Features a low 120mΩ drain-source on-resistance and 700mW maximum power dissipation. This surface-mount component operates within a temperature range of -55°C to 150°C, with a compact 2mm x 2mm x 0.75mm footprint. Designed for efficient switching with fast turn-on and turn-off times.
MountingSurface Mount
PolarityP-CHANNEL
Power1.4W
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Technical Specifications
Onsemi FDFMA2P853 technical specifications.
General
| Collector Emitter Breakdown Voltage | 2V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 120MR |
| Element Configuration | Single |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 435pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| RoHS Compliant | Yes |
| Series | PowerTrench® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.04g |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDFMA2P853 Datasheet
Download the complete datasheet for Onsemi FDFMA2P853 to view detailed technical specifications.
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