The BSR58_Q is a 40V N-channel MOSFET with a maximum power dissipation of 250mW. It is packaged in a SOT-23 case and available in quantities of 3000 per reel. The device has a drain to source breakdown voltage of 40V and a gate to source voltage of -40V. It is suitable for use in a variety of applications where a low-power MOSFET is required.
PackageSOT-23
PolarityN-CHANNEL
Power250mW
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Technical Specifications
Onsemi BSR58_Q technical specifications.
General
| Package/Case | SOT-23 |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 60R |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | -40V |
| Max Power Dissipation | 250mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Series | BSR58 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi BSR58_Q Datasheet
Download the complete datasheet for Onsemi BSR58_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.