SSM3K62TU,LF
Toshiba描述: | Trans MOSFET N-CH Si 20V 0.8A 3-Pin UFM T/R |
产地: | Thailand |
推出日期: | May 28, 2021 |
更新:16-OCT-2024 | |
查看更多 MOSFETs 属于 Toshiba | |
在线版本:https://www.datasheets.com/zh-cn/part-details/ssm3k62tu-lf-toshiba-403787298
概述
熟悉该组件的基本一般信息、属性和特征，以及其与行业标准和法规的符合情况。
生命周期高级
欧盟RoHS Yes
RoHS版本2011/65/EU, 2015/863
EAR99
汽车 No
供应商CAGE代码J2925
8541290095
日程B8541290080
PPAP No
AEC认证 No
类别路径
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > MOSFETs
Semiconductor > Diodes, Transistors and Thyristors > FET Transistors > MOSFETs
技术资料
通过下载该电子元件的数据手册来全面了解其。这个PDF文档包含了所有必要的细节，如产品概述、特性、规格、评级、图表、应用等等。
数据表预览
(Latest 版本)封装
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参数
参数信息显示了该组件的重要特性和性能指标，这有助于工程师和供应链经理比较和选择最适合其应用和需求的电子组件。
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生产线
Breakdown Voltage Type
Minimum DC Current Gain
Typical Switch Charge
Typical Gate Resistance
Typical Reverse Recovery Charge
Typical Forward Transconductance
Tradename
Minimum Gate Threshold Voltage
Typical Reverse Transfer Capacitance @ Vds
Maximum Offset Voltage
Maximum Positive Gate Source Voltage
Minimum Gate Resistance
Maximum Gate Resistance
Typical Gate Threshold Voltage
Typical Diode Forward Voltage
Maximum Diode Forward Voltage
Typical Reverse Recovery Time
Maximum Pulsed Drain Current @ TC=25°C
Maximum Forward Transconductance
Minimum Forward Transconductance
Minimum IDSS
ID For GFS
VDS For GFS
Maximum Input Capacitance @ Vds
Typical IDSS
Maximum Storage Temperature
Operating Junction Temperature
Maximum Gate Source Leakage Current
Minimum Storage Temperature
Typical Gate to Drain Charge
Typical Gate to Source Charge
Maximum Junction Ambient Thermal Resistance
Maximum Junction Case Thermal Resistance
Typical Fall Time
Typical Rise Time
Typical Turn-Off Delay Time
Supplier Temperature Grade
Typical Turn-On Delay Time
Configuration
Maximum Absolute Continuous Drain Current
类别
Channel Mode
Channel Type
Number of Elements per Chip
Process Technology
Maximum Drain Source Voltage
Maximum Gate Source Voltage
Maximum Continuous Drain Current
Material
Maximum Gate Threshold Voltage
Maximum Drain Source Resistance
Maximum IDSS
Typical Gate Charge @ Vgs
Typical Gate Charge @ 10V
Typical Input Capacitance @ Vds
Maximum Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Typical Output Capacitance
参考设计
通过我们的参考设计解锁灵感和指导，探索展示电子组件能力的实用实现。通过详细文档和原理图加速开发过程，创建高效的解决方案。
CAD模型
访问组件的3D CAD模型、符号和封装。轻松可视化其结构和尺寸，集成设计并优化性能。