Advanced Power Technology is a leading manufacturer of high-performance power semiconductor devices, specializing in silicon carbide (SiC) and insulated-gate bipolar transistors (IGBTs). They provide solutions for a wide range of industries, including electric vehicles, renewable energy, and industrial automation.
Power Field-Effect Transistor, 185A I(D), 200V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Power Field-Effect Transistor, 65A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN
Power Field-Effect Transistor, 43A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Rectifier Diode, 1 Phase, 2 Element, 15A, 400V V(RRM), Silicon, TO-247AC, TO-247, 3 PIN
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Power Field-Effect Transistor, 58A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Transistor
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Power Field-Effect Transistor, 30A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Power Field-Effect Transistor, 84A I(D), 300V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Rectifier Diode, 1 Phase, 2 Element, 60A, 300V V(RRM), Silicon, TO-264AA, TO-264, 3 PIN
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Insulated Gate Bipolar Transistor, 134A I(C), 1200V V(BR)CES, N-Channel, T-MAX, 3 PIN
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 15A, 1000V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN
Power Field-Effect Transistor, 58A I(D), 500V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 3 PIN