Low Current Broadband UHF Low Noise Amplifier with the ESD-Hardened BFP540ESD RF Transistor draws 3mA
Thiết kế tham khảo bởi: Infineon Technologies AG
Low Current Broadband UHF Low Noise Amplifier with ESD-Hardened BFP540ESD RF Transistor draws 3mA. The ESD-hardened BFP540ESD RF Transistor, capable of sustaining 1000 V Electro Static Discharge pulses per the Human Body Model is unique in terms of combining high RF performance with ESD robustness