MSCSICMDD/REF1, Dual SiC MOSFET Driver Reference Design

MSCSICMDD/REF1, Reference Design provides an example of a highly-isolated SiC MOSFET dual-gate driver. It can be configured by switches to drive as a half-bridge configuration with one side on and dead time protection. It can also be configured to provide concurrent drive with the requirement to study UIS or double-pulse testing. This design can be used with most SiC MOSFET discrete and module devices. The dead time and gate drive resistance are adjusted by the user to match the requirements of the application. Dead time protection and desaturation protection makes device evaluation easier while lowering the risk of damaging parts