Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, CERDIP-14
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, DIP-14
Wide Band Low Power Amplifier, 100MHz Min, 2300MHz Max, SM11, SURFACE MOUNT PACKAGE
