The FDZ203N_Q is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 20V and a continuous drain current of 7.5A. It has a drain to source resistance of 18mR and a power dissipation of 1.6W. The device operates over a temperature range of -55°C to 150°C and is packaged on tape and reel.
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDZ203N_Q technical specifications.
General
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 18mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDZ203N_Q Datasheet
Download the complete datasheet for Onsemi FDZ203N_Q to view detailed technical specifications.
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