FDG6318PZ Q ONSEMI - Electronic Components Search

P-CHANNEL FET, -700mA, -12V, 270mR, 300mW, Tape and Reel

Obsolete

Continuous Drain Current (ID): -700mA

Drain to Source Breakdown Voltage: -12V

Drain to Source Resistance: 270mR

Fall Time: 13ns

MOSFET Dual P-Ch 1.8V Spec Power Trench

Obsolete

Continuous Drain Current (ID): -600mA

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 400mR

Fall Time: 15ns

MOSFET SuperSOT-3

Obsolete

Continuous Drain Current (ID): -2.5A

Drain to Source Breakdown Voltage: -12V

Drain to Source Resistance: 90mR

Fall Time: 14ns

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