
NPN RF BJT transistor, single configuration, silicon material, designed for surface mount applications. Features a 3-pin S-Mini package with gull-wing leads, measuring 2.9mm L x 1.5mm W x 1.1mm H. Offers a maximum collector-emitter voltage of 15V, maximum collector current of 0.025A, and a maximum power dissipation of 150mW. Exhibits a minimum DC current gain of 60 at 8mA/3V, with a transition frequency of 1500MHz (typical). Operates within a temperature range of -55°C to 125°C.
Toshiba 2SC3121(T5LUNIDENF technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | S-MINI |
| Package/Case | S-Mini |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 1.15 |
| Pin Pitch (mm) | 0.95 |
| Package Weight (g) | 0.012 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 15V |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.025A |
| Maximum Power Dissipation | 150mW |
| Minimum DC Current Gain | 60@8mA@3V |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Transition Frequency | 1500(Typ)MHz |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Cage Code | S0562 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Toshiba 2SC3121(T5LUNIDENF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.