N-channel enhancement mode MOSFET featuring 280V drain-source breakdown voltage and 36A continuous drain current. This transistor offers a low 51mΩ on-resistance at 10V gate-source voltage and a 5V threshold voltage. With a maximum power dissipation of 165W and an operating temperature range of -55°C to 150°C, it is housed in a TO-3PF package with through-hole termination. RoHS compliant and lead-free.
Current Rating36A
MountingThrough Hole
PolarityN-CHANNEL
Power165W
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Technical Specifications
Onsemi FDAF62N28 technical specifications.
General
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 280V |
| Drain to Source Resistance | 51mR |
| Drain to Source Voltage (Vdss) | 280V |
| Dual Supply Voltage | 280V |
| Fall Time | 220ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.63nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 165W |
| Rds On Max | 51mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | UniFET™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 110ns |
| DC Rated Voltage | 280V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDAF62N28 Datasheet
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