N-channel MOSFET with 104V drain-to-source breakdown voltage and 21A continuous drain current. Features 860MHz maximum frequency, 21dB gain, and 140W maximum output power. Designed for surface mount applications with a 13V gate-to-source voltage. Operates from -65°C to 150°C, is lead-free, and RoHS compliant.
Frequency860MHz
Voltage Rating104V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
NXP BLF881S,112 technical specifications.
General
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 104V |
| Drain to Source Voltage (Vdss) | 104V |
| Frequency | 860MHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Frequency | 860MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 140W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 33W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 104V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF881S,112 Datasheet
Download the complete datasheet for NXP BLF881S,112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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