P-channel MOSFET, SOT-23-3 package, featuring a 12V drain-source voltage and 4.1A continuous drain current. Offers a low 32mΩ drain-to-source resistance at 4.5V gate-source voltage. Maximum power dissipation is 750mW, with operating temperatures ranging from -55°C to 150°C. Surface mountable with tape and reel packaging, this component is RoHS compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI2333DS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 32mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2333DS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2333DS-T1-GE3 to view detailed technical specifications.
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