N-channel MOSFET, designed for general-purpose small signal applications. Features a 30V drain-source voltage and 3.6A continuous drain current. Offers a low 60mΩ maximum drain-source on-resistance and 235pF input capacitance. Packaged in a SOT-23-3 surface-mount case, this component is RoHS compliant and operates from -55°C to 150°C.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI2304DDS-T1-GE3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 49mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 60mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 235pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Nominal Vgs | 2.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.2V |
| Turn-On Delay Time | 12ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI2304DDS-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI2304DDS-T1-GE3 to view detailed technical specifications.
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