
NPN bipolar junction transistor (BJT) in a DPAK package, featuring a maximum collector current of 8A and a collector-emitter breakdown voltage of 80V. This component offers a power dissipation of 1.75W and a transition frequency of 85MHz. It operates within a temperature range of -55°C to 150°C and is RoHS compliant. The transistor is supplied on tape and reel, with 1800 units per package.
Onsemi MJD44H11RLG technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 85MHz |
| Gain Bandwidth Product | 85MHz |
| Halogen Free | Halogen Free |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Number of Elements | 1 |
| Package Quantity | 1800 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 85MHz |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJD44H11RLG to view detailed technical specifications.
No datasheet is available for this part.
