NPN Darlington bipolar junction transistor (BJT) in a TO-204 package, featuring a 120V collector-emitter breakdown voltage and a continuous collector current rating of 50A. This device offers a maximum power dissipation of 300W and a minimum DC current gain (hFE) of 1000. Operating across a temperature range of -55°C to 200°C, it is RoHS compliant and supplied in tray packaging.
PackageTO-204-3
Current Rating50A
PolarityNPN
Power300W
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Technical Specifications
Onsemi MJ11032G technical specifications.
General
| Package/Case | TO-204-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 3.5V |
| Continuous Collector Current | 50A |
| Current Rating | 50A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 8.51mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 38.86mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | NPN |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 120V |
| Width | 26.67mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJ11032G Datasheet
Download the complete datasheet for Onsemi MJ11032G to view detailed technical specifications.
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