High-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a robust 1700V breakdown voltage and a continuous collector current rating of 42A. Optimized for efficient switching with low on-state voltage drop and fast switching speeds. Ideal for use in power supplies, motor drives, and industrial automation systems.
Quick Jump:
Technical Specifications
Littelfuse IXBH42N170 technical specifications.
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Littelfuse IXBH42N170 Datasheet
Download the complete datasheet for Littelfuse IXBH42N170 to view detailed technical specifications.
No datasheet is available for this part.