
Automotive N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-performance applications. Features a 360V clamping voltage and 390V collector-emitter breakdown voltage, supporting continuous collector current up to 46A. With a low collector-emitter saturation voltage of 1.17V and a maximum power dissipation of 250W, this device operates efficiently across a wide temperature range of -40°C to 175°C. Packaged in a TO-220-3 configuration for through-hole mounting, it offers fast switching characteristics with a turn-on delay of 700ns and turn-off delay of 10.8µs. This RoHS compliant component is supplied in a tube for convenient integration.
Onsemi ISL9V5036P3-F085 technical specifications.
| Package/Case | TO-220-3 |
| Clamping Voltage | 360V |
| Collector Emitter Breakdown Voltage | 390V |
| Collector Emitter Saturation Voltage | 1.17V |
| Collector Emitter Voltage (VCEO) | 1.6V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Collector Current | 46A |
| Height | 20.4mm |
| Max Breakdown Voltage | 390V |
| Max Collector Current | 46A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Number of Outputs | 1 |
| Operating Supply Voltage | 360V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, EcoSPARK® |
| Turn-Off Delay Time | 10.8us |
| Turn-On Delay Time | 700ns |
| Weight | 1.8g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi ISL9V5036P3-F085 to view detailed technical specifications.
No datasheet is available for this part.
