N-channel enhancement mode power MOSFET featuring 50V drain-source voltage and 35A continuous drain current. This single-element transistor offers a low 28mΩ drain-source on-resistance at 10V Vgs and a typical gate charge of 100nC. Packaged in a 3-pin TO-220 through-hole configuration with a plastic package and tab, it supports a maximum power dissipation of 150W and operates across a wide temperature range of -55°C to 175°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Onsemi IRFZ40 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 50V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 35A |
| Maximum Drain Source Resistance | 28@10VmOhm |
| Typical Gate Charge @ Vgs | 100(Max)@10VnC |
| Typical Gate Charge @ 10V | 100(Max)nC |
| Typical Input Capacitance @ Vds | 2450@25VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 5V1P1 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Onsemi IRFZ40 Datasheet
Download the complete datasheet for Onsemi IRFZ40 to view detailed technical specifications.
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