25A, 1kV silicon bridge rectifier diode designed for through-hole mounting. Features a maximum forward surge current of 300A and a maximum reverse leakage current of 5uA. Operates within a temperature range of -50°C to 150°C, with a capacitance of 180pF. Packaged in bulk for high-volume applications.
Capacitance180pF
Current Rating25A
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor GBPC2510W technical specifications.
General
| Capacitance | 180pF |
| Current Rating | 25A |
| Forward Current | 25A |
| Height | 11.23mm |
| Lead Free | Lead Free |
| Length | 29mm |
| Max Forward Surge Current (Ifsm) | 300A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Repetitive Reverse Voltage (Vrrm) | 1kV |
| Max Reverse Current | 5uA |
| Max Reverse Leakage Current | 5uA |
| Max Surge Current | 300A |
| Mount | Through Hole |
| Output Current | 25A |
| Package Quantity | 100 |
| Packaging | Bulk |
| DC Rated Voltage | 1kV |
| Width | 29mm |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor GBPC2510W Datasheet
Download the complete datasheet for Taiwan Semiconductor GBPC2510W to view detailed technical specifications.
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